C30927 series of quadrant Si Avalanche Photodiode and the C30985E multi element APD array utilize the double-diffused “reach-through“structure. This structure provides ultra high sensitivity at 400-1000 nm.
The C30927 quadrant structure has a common avalanche junction, with separation of the quadrants achieved by segmentation of the light entry p+ surface opposite the junction. With this design, there is no dead space between the elements and therefore no loss of response at boresight.
The C30927EH-01, -02 and -03 are optimized for use at wavelengths of 1060, 900, and 800 nm respectively. Each device type will provide high responsivity and excellent performance when operated within about 50nm of the specified wavelength.
The C30985E is a 25-element silicon avalanche photodiode (Si APD) consisting of a double diffused “reach through” structure. This structure provides high responsivity up to 1060 nm incidence radiation and even beyond, as well as fast rise and fall times at all wavelengths.
The C30954EH, C30955EH, and C30956EH are general purpose silicon avalanche photodiodes made using a double-diffused "reach-through" structure. The design of these photodiodes are such that their long wave response (i.e. >900 nm) has been enhanced without introducing any undesirable properties.
These APDs have quantum efficiency of up to 40 % at 1060 nm. At the same time, the diodes retain the low noise, low capacitance, and fast rise and fall times characteristics.
To help simplify many design needs, these APDs are also available in Excelitas' high performance hybrid preamplifier module type C30659 series, as well as the preamplifier and TE cooler incorporated module type LLAM series. Please refer to the respective sections in this catalog.