PIN Photodiodes for High Performance Applications
Silicon PIN photodiodes are available in a wide variety of active area to accommodate a large variety of applications. The PIN structure allows high quantum efficiency and fast response for detection of photon in the 400 nm to 1100 nm range.
The YAG series offers an exceptional 0.4 A/W at 1060 nm by using a thick silicon material. Designed with a guard ring to collect current generated outside of the active area, they are the detectors of choice when the entire chip is illuminated by reducing unwanted carriers responsible for noise.
Precise beam positioning can be achieved by using our quadrant detectors. They are designed with 4 pie-shaped quadrant sections from doping process thus reducing to almost zero the “dead” space between each quadrant. Each quadrant is connected to an isolated lead.
The C30741 provide fast response and good quantum efficiency in the spectral range between 300 nm to 1100 nm. Designed for high-speed, high-volume production and cost sensitive applications, these photodiodes are offered in plastic package, either TO style or SMD packages with a visible blocking filter option.
Our UV series are high quality Si PIN photodiode in hermetically sealed TO package designed for the 220nm to 1100nm wavelength region with enhanced operation in the UV range. Low noise detection is achieved by operating the UV series in photovoltaic mode (0V bias).
The InGaAs PIN detectors provide high quantum efficiency from 800 nm to 1700 nm. They feature low capacitance for extended bandwidth, high resistance for high sensitivity, high linearity, and uniformity within 2 % across the detector active area.