C30884EH - Si APD, 1mm, TO-5
The C30884EH Silicon Avalanche Photodiode (Si APD) offers very high modulation capability with high responsivity and fast rise and fall times. Because the fall time characteristic has no “tail”, the responsivity of the device is independent of modulation frequency up to about 400 MHz. This Si APD is made using a double-diffused “reach-through” structure and is optimized for high responsivity at wavelengths of below 1000 nm.
The C30884EH is hermetically-sealed behind a flat glass window in a modified low-profile TO-5 package.
Applications:
- Optical Communications
- Laser Range Finding
- High Speed Switching Systems
High Quantum Efficiency:
- 85% typical at 900 nm
- 10% typical at 1060 nm
Spectral Response Range– (10% Points) 400 to 1100 nm
Fast Time Response:
- Rise time: 1 ns
- Fall time: 1 ns
Wide operating Temperature Range: -40°C to 70°C
Hermetically Sealed Low-Profile TO-5 package
High Quantum Efficiency:
- 85% typical at 900 nm
- 10% typical at 1060 nm
Spectral Response Range– (10% Points) 400 to 1100 nm
Fast Time Response:
- Rise time: 1 ns
- Fall time: 1 ns
Wide operating Temperature Range: -40°C to 70°C
Hermetically Sealed Low-Profile TO-5 package