C30927EH-03 - Si APD Quadrant - 1.5mm - 800 nm
The C30927EH-03 quadrant silicon avalanche photodiode with 1.55 mm useful diameter is designed with a double diffused "reach-through" structure. The quadrant structure has a common avalanche junction, with separation of the quadrants achieved by segmentation of the light-entry p+ surface opposite the junction. With this design, there is no dead space between the elements and therefore no loss of response at boresight.The C30927EH-03 is optimized for operating at 800 nm, providing high responsivity and excellent performance when operated within about 50 nm of the specified wavelength.
The quadrant avalanche photodiodes are useful in a variety of tracking and alignment applications.
Key Features:
- Full Angle for Totally illuminated Photosensitive Surface greater than 90º
- High Quantum Efficiency optimized for 800 nm operation
- Fast Time Response
- Large Active Area: 1.77 mm²
- Hermetically Sealed Low Profile TO-8 Packages
Applications:
- Tracking
- Alignment
- "Friend or Foe" identification
Breakdown voltage range (V): 350 to 485
Typical breakdown voltage (V): 425
Typical gain (M): 100
Typical Temperature Coefficient for constant gain (V/℃): 2.4
Minimal Responsivity at 800 nm (A/W): 45
Typical Responsivity at 800 nm (A/W): 55
Typical total dark current (nA): 100
Maximal total dark current (nA): 200
Typical noise current per element (pA/√Hz): 1.0
Maximal noise current per element (pA/√Hz): 1.5
Typical capacitance total of all quadrants (pF): 3
Maximal capacitance total of all quadrants (pF): 5
Maximal series resistance (Ω): 15
Typical rise and fall time (ns): 3
Storage temperature (℃): -60 to 120
Operating temperature (℃): -40 to 60
Breakdown voltage range (V): 350 to 485
Typical breakdown voltage (V): 425
Typical gain (M): 100
Typical Temperature Coefficient for constant gain (V/℃): 2.4
Minimal Responsivity at 800 nm (A/W): 45
Typical Responsivity at 800 nm (A/W): 55
Typical total dark current (nA): 100
Maximal total dark current (nA): 200
Typical noise current per element (pA/√Hz): 1.0
Maximal noise current per element (pA/√Hz): 1.5
Typical capacitance total of all quadrants (pF): 3
Maximal capacitance total of all quadrants (pF): 5
Maximal series resistance (Ω): 15
Typical rise and fall time (ns): 3
Storage temperature (℃): -60 to 120
Operating temperature (℃): -40 to 60